CMOS photodiodes based on vertical p-n-p junctions
نویسنده
چکیده
A device composed of two junctions, but operating as a photodiode is designed and implemented in a pre-production 1 μm complementary-metal-oxide-semiconductor silicon technology foundry service. No process modification is performed. Tests are performed at a wavelength of 783 nm. Rise and fall times in the nanosecond range are reported along with sensitivity and bandwidth measurements. The suitability of the device for optical interconnects is discussed.
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